| Item | Silicon Carbide Ingots and Custom-Sized Wafers | |||||
| Type | 4H-N Type/4H-HPSI Semi-Insulating Type | |||||
| Ingots | Custom-Sized Wafers | Special-shaped specification | ||||
| Case 1 | 4-inch * T10mm | 2-inch * T3.0mm | Silicon carbide rings and blocks | |||
| Case 2 | 6-inch * T20mm | 2-inch * T0.1mm | Silicon carbide optical lenses | |||
| Case 3 | 8-inch * T20mm | 3-inch * T5.0mm | Silicon carbide perforated wafer | |||
| Case 4 | 2-8inch Ingots | 6-inch * T1.0mm | Silicon carbide laser cutting | |||
| Case 5 | Polished ingot | Ø159mm * T0.725mm | Silicon carbide engraving | |||
|
Surface Finishing |
Cutting | Grinding | Polishin | |||
Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.
| Crystal Structure | Hexagonal |
| Lattice Constant(nm) | a=3.076Å c=10.053Å |
| Density(g/cm3) | 3.21 |
| Melting point（℃） | 2830 |
| Mohs Hardness(mohs) | 9.2 |
| Dielectric Constant | 9.66 |
| Band Gap(eV) | 3.26 |
| Breakdown Electrical Field (MV/cm) | 3.1 |
| Thermal Conductivity(W/cm.K) | 4.5 |
| Thermal Expansion | 4.7*10-6/k |
| Refractive Index | 2.6767～2.6480 |
