As semiconductor technology advances, Gallium Nitride (GaN) has become a core material in optoelectronics, radio frequency (RF) communication, and power devices...

With the rapid advancement of third-generation semiconductor technologies, Silicon Carbide (SiC) has emerged as a key material due to its wide bandgap, high the...

As third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) continue to gain traction in high-power electronic applicati...

With the continuous advancement of power electronics, RF devices, and optoelectronic technologies, the demand for high-performance semiconductor materials is in...

The selection of substrate materials plays a crucial role in the development of high-frequency, high-power RF (radio frequency) devices. Single-crystal sapphire...

Introduction Silicon carbide (SiC), gallium nitride (GaN), and sapphire (Al₂O₃) are essential materials in semiconductor, optoelectronic, and high-power elect...

As electronic technology continues to advance, wide-bandgap semiconductor materials are increasingly being applied in various fields, especially in electronic d...

With the rapid advancement of third-generation semiconductor technology, silicon carbide (SiC) wafers have become a core material in power electronics, RF devic...

In semiconductor manufacturing, wafer substrates serve as the fundamental material for integrated circuits (ICs), optoelectronic devices, and power electronics....

HVPE Technology: The Key Growth Method for High-Quality GaN Single-Crystal Substrates With the increasing demand for high-performance gallium nitride (GaN) mate...