Introduction Silicon carbide (SiC), as a wide-bandgap semiconductor material, is widely used in high-power, high-frequency, and high-temperature electronic devices due to its excellent physical and chemical properties, such as high breakdown electric field, high thermal conductivity, and high electron saturation velocity. The polytypes and various crystal orientations of SiC present different performance characteristics in practical applications. Understanding the differences in these crystal structures and orientations is crucial for designing and manufacturing high-performance SiC devices.

Gallium Arsenide (GaAs), with the chemical formula GaAs, is a black-gray solid with a melting point of 1238°C. It remains stable in air at temperatures below 600°C and is resistant to corrosion by non-oxidizing acids.



Gallium arsenide is a crucial semiconductor material classified as a III-V compound semiconductor. It crystallizes in a zinc blende lattice structure, with a lattice constant of 5.65×10⁻¹⁰ m and a melting point of 1237°C. The material has a bandgap energy of 1.4 eV. Gallium arsenide became commercially viable in 1964. It can be fabricated into semi-insulating high-resistance materials with resistivity three orders of magnitude higher than that of silicon or germanium, making it ideal for use as substrates in integrated circuits, infrared detectors, and gamma photon detectors. Due to its electron mobility being 5 to 6 times greater than that of silicon, gallium arsenide is widely used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices made from gallium arsenide exhibit superior performance in high-frequency, high-temperature, and low-temperature conditions, along with low noise and strong radiation resistance. Additionally, it is suitable for the production of transfer devices such as bulk effect devices. Gallium arsenide is a semiconductor material that combines multiple advantages, but transistors made from it have a low amplification factor and poor thermal conductivity, making them less suitable for high-power applications. Although gallium arsenide offers exceptional performance, its tendency to decompose at high temperatures makes the production of high-purity single-crystal materials with an ideal chemical composition technically challenging.

Silicon carbide (SiC) is a crucial wide-bandgap semiconductor material, widely used in high-temperature, high-frequency, and high-power electronic devices. However, during the production of SiC epitaxial wafers, the presence of pit defects significantly impacts surface quality and device performance. Understanding and controlling the mechanisms behind these defects is essential for improving the quality of SiC epitaxial wafers.

Semiconductor technology underpins comprehensive advancements in information and energy sectors, fundamentally transforming human production and lifestyles. The first-generation semiconductors, Germanium (Ge) and Silicon (Si), are the most maturely developed. The second-generation semiconductors are Gallium Arsenide (GaAs) and Indium Phosphide (InP). The third-generation semiconductors, Silicon Carbide (SiC) and Gallium Nitride (GaN), have produced and continue to produce profound and lasting impacts in power electronics and RF microwave fields.

Silicon carbide (SiC) is a crucial wide bandgap semiconductor material known for its excellent physical and electrical properties, making it ideal for high-temperature, high-frequency, and high-power electronic devices. Doping is a key step in the manufacturing process of SiC wafers. By introducing impurities, doping modifies the electrical characteristics of SiC to meet specific device requirements. This article provides a detailed overview of the doping processes for SiC wafers and their applications.

Silicon carbide (SiC) wafers, as third-generation semiconductor materials, have garnered significant attention due to their excellent performance in high-temperature, high-frequency, and high-power applications. The demand for SiC wafers continues to rise, particularly in electric vehicles, photovoltaic power generation, and high-frequency electronic devices. However, the price of SiC wafers remains high and volatile. This article will delve into the main factors influencing the price of silicon carbide wafers.

In the semiconductor manufacturing field, epitaxial growth processes are crucial technologies, among which silicon epitaxy and silicon carbide epitaxy are two important types. They differ significantly in terms of materials, applications, processes, and characteristics, as detailed below.

8-inch sapphire substrates play a crucial role in the manufacturing of modern electronic and optoelectronic devices. With their excellent thermal conductivity, mechanical strength, and chemical resistance, they are widely used in fields such as LEDs, lasers, and RF devices. This article will explore the specific applications and advantages of 8-inch sapphire substrates in Micro LEDs, HEMTs devices, and carrier wafers, highlighting their significant contributions to improving device performance and production efficiency.

The fabrication of 8-inch sapphire substrates is a complex and precise process that involves several key steps. Initially, high-purity aluminum oxide (Al₂O₃) powder is used as the raw material to ensure the purity and quality of the material. Next, sapphire single crystals are grown from the molten aluminum oxide using crystal growth techniques such as the Czochralski (CZ) method, the Kyropoulos (KY) method, or the Heat Exchanger Method (HEM). This process requires stringent control of temperature and cooling rates to achieve high-quality single crystals.

In the semiconductor manufacturing field, wafer thinning is a crucial process. It involves reducing the thickness of semiconductor wafers through methods such as mechanical grinding, chemical mechanical polishing (CMP), or chemical etching. This article explores the necessity of wafer thinning, the methods employed, and its significant role in the semiconductor industry.