Silicon carbide (SiC), as a third-generation semiconductor material, plays a crucial role in power electronics and high-frequency applications due to its excellent physical and chemical properties. However, the extreme hardness, high thermal resistance, and chemical inertness of SiC make its processing highly challenging, especially in wafer cutting. Efficient and precise wafer cutting is essential to ensuring the performance of SiC devices. This article provides an in-depth introduction to several mainstream SiC wafer cutting processes, analyzing their advantages, disadvantages, and applicable scenarios.

In the semiconductor industry, wafer substrates serve as the core material, playing a crucial role in everything from chip fabrication to integrated systems. As technology advances, wafer substrates are being applied in a wider range of fields, from traditional electronic devices to optoelectronics, RF devices, and even quantum computing. Therefore, testing wafer substrates is essential to ensure they meet the demanding requirements of various applications. This article explores the key tests performed on wafer substrates from an application perspective, ensuring that they meet the high standards required in different sectors.

Chemical Mechanical Planarization (CMP) is a critical process in semiconductor manufacturing, combining mechanical abrasion and chemical corrosion to achieve material planarization. However, due to its complexity, various defects can arise during the CMP process. These defects can generally be categorized into mechanical, chemical, and surface-related issues. They not only affect the current planarization results but also have a profound impact on subsequent integrated circuit manufacturing processes. A thorough understanding of these defects and the implementation of targeted process optimizations can significantly improve CMP yield and reliability.

In the semiconductor industry, yield is a core metric for evaluating production efficiency and cost-effectiveness in wafer manufacturing. Yield directly impacts manufacturing costs and determines a company’s competitive edge. Managing and improving yield is a complex, ongoing process that requires comprehensive optimization across processes, design, materials, and equipment. This article will explore the definition, types, influencing factors, and strategies for improving yield, along with case studies demonstrating how to effectively enhance yield in wafer manufacturing.

In the semiconductor industry, particularly in the field of third-generation semiconductors (wide-bandgap semiconductors), the roles of the substrate and epitaxial layer are crucial. The substrate serves as the foundation for semiconductor devices, while the epitaxial layer enhances device performance through advanced growth techniques. So, what exactly distinguishes the substrate from the epitaxial layer, and how do they each contribute to semiconductor device manufacturing?

In silicon carbide (SiC) wafer manufacturing, orientation flats (flat edges) and notches are two common methods used to indicate the wafer’s crystal orientation and axes, aiding precise alignment during the manufacturing and handling processes. The choice between these two marking designs reflects different technical and process requirements, and is influenced by factors such as wafer size, equipment compatibility, and cost control. For those interested in 6-inch SiC wafers, you can find more information or purchase them through this product link.

Gallium Arsenide (GaAs) wafers, as a crucial compound semiconductor material, are widely used in the production of high-performance electronic and optoelectronic devices due to their exceptional electronic and optical properties. To meet the diverse demands of various applications, GaAs wafers can be categorized based on doping methods, crystal structure, size specifications, and specific usage. This article systematically introduces the main classification methods of GaAs wafers and their corresponding application fields.

With the continuous advancement of modern semiconductor technology, integrated circuits (ICs) are rapidly evolving toward higher density, miniaturization, and lower power consumption. Against this backdrop, wafer thinning technology has become increasingly crucial. Wafer thinning refers to the process of reducing the thickness of a fully processed semiconductor wafer using grinding, polishing, and other techniques. Although this process might seem straightforward, it significantly impacts the performance, packaging, and application of semiconductor devices. This article will explore the reasons for wafer thinning, the methods involved, and its importance and applications in the semiconductor industry.

Gallium Nitride (GaN), as a core material of the third-generation wide bandgap semiconductors, is rapidly emerging as the ideal choice for optoelectronic, power electronic, and microelectronic applications due to its superior properties. GaN exhibits high breakdown field strength, high electron saturation velocity, strong radiation resistance, and excellent chemical stability, supporting a wide range of high-power and high-efficiency applications. However, despite its outstanding performance, GaN's development in practical applications has been constrained by significant technical challenges.

As technology rapidly advances, the performance demands on electronic materials continue to escalate, and traditional silicon-based materials are gradually falling short of meeting the needs of emerging applications. Against this backdrop, gallium oxide (Ga₂O₃) has garnered significant attention in both research and industry as a wide-bandgap semiconductor material, thanks to its outstanding properties.