In today's field of microelectronics and nanotechnology, silicon carbide wafers (SiC wafers) serves as a widely used material with significant potential in high-power electronic devices, optoelectronic devices, and sensors. In the fabrication and device processing of SiC wafers, etching technology plays a crucial r

Introduction: Epitaxial technology is a semiconductor fabrication method used to grow crystalline thin films on specific crystal substrates, enabling the fabrication of semiconductor devices with tailored structures and functionalities. Silicon carbide wafer (SiC wafer) and gallium nitride wafers (GaN wafers) are wide

The 8-inch N-type SiC double-side polished substrate is a silicon carbide wafer with a diameter of 8 inches (approximately 200 millimeters), processed through double-side polishing to achieve high flatness and smoothness, utilized in the manufacturing of high-power electronic devices such as power MOSFETs, Schottky dio

Silicon carbide polytype substrates are pivotal semiconductor materials renowned for their exceptional thermal, electrical, and optical properties, extensively employed in power electronics, optoelectronics, MEMS, and various other domains. As suppliers of silicon carbide polytype substrates, silicon carbide wafer supp

In the semiconductor industry, silicon carbide substrates （SIC substrates) play a crucial role, and the processing method directly impacts production efficiency and product quality. In the processing of silicon carbide substrates, free-form and fixed-cutting are two common methods. In this article, we will provide a det

In today's semiconductor technology domain, silicon carbide (SiC) epitaxial growth technology has garnered significant attention due to its continuous advancements in crystal quality, growth rate, and application scope, offering vast prospects and potential applications for SiC epi wafers in the future semiconducto

The Schottky barrier is an electric potential barrier formed at the junction between a metal and a semiconductor due to the difference in energy levels between them. In the modern semiconductor industry, SiC wafers have emerged as an ideal choice for constructing Schottky barriers, garnering significant attention. 1.

The band gap of silicon carbide (SiC) cannot be adjusted as easily as other semiconductor materials such as silicon (Si). This is attributed to several reasons stemming from significant differences in crystal structure and chemical properties between silicon carbide and traditional silicon. 1.Crystal Structure Discrepa

In the realm of semiconductor materials, 4H Semi-insulating SiC wafer stand out with their impressive thermal conductivity of 4.9W/cm.k@298K. This characteristic opens the door to a myriad of applications, making them a preferred choice for various thermal management solutions. 1.Superior Thermal Conductivity:At 298K,

Gallium Nitride (GaN) is a crucial wide-bandgap semiconductor material with numerous superior properties in the fields of electronics and optoelectronics. The following is the performance advantages、specifications and applications of GaN Freestanding Substrate: 1.Performance Advantages of GaN Freestanding Substratea.W