In the ever-evolving world of semiconductor technology, researchers and engineers are constantly seeking ways to enhance the performance of high-frequency devices. One breakthrough that is garnering significant attention is the utilization of gallium Gallium nitride wafer. These advanced substrates offer unique charact

In the realm of microelectronics, technological advancements continue to shape our world, enabling faster communication, greater energy efficiency, and more compact devices. One such advancement that holds immense potential is the utilization of gallium Gallium nitride wafer microelectronics. This cutting-edge technolo

At present, silicon carbide accelerates penetration in new energy, charging piles, rail transit and other fields. Moreover, due to its high-speed switching and low on-resistance characteristics, it can exhibit excellent electrical characteristics even under high temperature conditions, greatly reducing switching losses

In the world of display technologies, two prominent contenders have emerged: microLED and micro-OLED. Both offer unique advantages and trade-offs that make them suitable for specific applications. In this blog, we will delve into the key distinctions between these two display technologies. While microLED utilizes inorg

Currently, increasing the brightness of LEDs remains a subject of intense research for optoelectronic engineers worldwide. The improvement in LED brightness can lead to wider application areas, higher quality, smaller size, energy-efficient products, longer lifespan, and increased market competitiveness. Graphical sapp

As a third-generation semiconductor material, silicon carbide wafers not only have the advantages of wide band gap, but also have a characteristic of better thermal conductivity. Usually, the electronic components in electric vehicles will generate a lot of heat during operation. If the heat dissipation performance is

Classification of Epitaxial Growth Processes 1、Sapphire crystal growth: Soaking method KY 2、Silicon pulling: Czochralski method CZ (conventional), Floating zone method FZ (high resistance)3、Gallium arsenide, Indium phosphide, Germanium wafers (the second-

Gallium nitride (GaN), as one of the core materials for third-generation wide-bandgap semiconductors, possesses excellent properties such as high breakdown field strength, high saturation electron drift velocity, strong radiation resistance, and good chemical stability. It is an ideal material for the production of wid

The 2023 Photovoltaic Semiconductor Exhibition showcased the latest advancements in semiconductor devices and chips, drawing the attention of technology enthusiasts and industry experts alike. As a technical sales representative, I had the privilege of attending this prestigious event and witnessing the breakthroughs t

On one hand, we have major original equipment manufacturers struggling to "get on board" with core technologies, while on the other hand, there is insufficient production capacity for silicon carbide, leading to challenges in the upstream and downstream industrial chains. What is causing these issues?"Currently, the bo