At the forefront of semiconductor technology, silicon carbide homogeneous epitaxy offers a multitude of advantages, enabling groundbreaking innovations across various industries. So JXT Technology Co.,Ltd. is excited to explore the material characteristics, advantages, applications, and research value of 4H-N SiC epita

When it comes to silicon carbide (SiC) wafer materials, the 4H-HPSI type of silicon carbide stands out for its exceptional material characteristics and its wide range of applications in the semiconductor industry. As a third-generation semiconductor materials expert, JXT Technology Co., Ltd. (https://www.jxtwafer.com/)

8inch Silicon Carbide Ingot can be customized4H-N Type
Diameter:200mmThickness: 12.88mmAs follow: Your browser is not supported

Third-generation semiconductor materials possess material performance advantages that are unparalleled by silicon materials. When considering characteristics such as the bandgap width, thermal conductivity, and breakdown field, third-generation semiconductors outperform silicon. Consequently, the introduction of third-

1.SiC's Advantages in Green Energy ApplicationsThe wide bandgap of SiC (Silicon Carbide), which is over three times wider than that of conventional Si (Silicon), allows it to withstand voltages over ten times greater. SiC's low loss and high-power characteristics are suitable for applications requiring high vol

Silicon Carbide Epitaxial Wafer Fabrication MethodsCVD method is currently the most widely used technique for silicon carbide (SiC) epitaxial wafer fabrication.1.Epitaxy is a common technique for producing single crystal thin films. It differs from S-device processes, and almost all SC power electronic device processe

The prospects of SiC semiconductors in convenient electrical energy are extremely promising, with a sustained growth in their consumption. When utilizing electrical power, across processes ranging from power generation to consumption, there is a significant employment of semiconductor power devices in scenarios involvi

1.The introduction to SiC epitaxyUnlike the conventional silicon power device fabrication process, silicon carbide power devices cannot be directly manufactured on silicon carbide single crystal material. Instead, a layer of micron-scale new single crystal material must be grown on a carefully processed single crystal

Gallium Nitride (GaN) has emerged as a promising material for various high-performance electronic and optoelectronic devices. Its unique properties make it an attractive alternative to traditional materials in many applications. One crucial aspect of utilizing GaN effectively is the choice of a suitable substrate for e

The semiconductor industry is constantly seeking materials that can provide enhanced performance, efficiency, and reliability. Gallium Nitride (GaN) substrates have emerged as a game-changing solution, offering several distinct advantages over traditional semiconductor materials. In this article, we will explore the be