In the realm of semiconductor materials, epitaxial growth stands as a pivotal technique, enabling precise control over crystal structures and properties. This method not only plays a crucial role in semiconductor fabrication but also drives innovation across various industries. What is Epitaxial Growth? Epitaxial growt

Dislocations are a significant factor affecting the quality and performance of 4H-SiC (Silicon Carbide) single crystals. Understanding the types of dislocations, their causes, and control methods is crucial for improving the quality of 4H-SiC single crystals. Types of Dislocations The common types of dislocations in th

In the modern field of science and technology, Silicon Carbide (SiC) serves as an important functional material widely used in semiconductor industry, power electronics, optoelectronics, and magnetic materials, among others. Different research and development methods possess their unique characteristics and applicable

In the realm of semiconductor materials, Gallium Nitride (GaN) has emerged as a pivotal player, offering a myriad of advantages and driving significant industry trends. In this blog post, we delve into the prowess of GaN material and the evolving landscape of its industrial applications.GaN substrate Advantages of GaN

Silicon carbide (SiC) epitaxial growth plays a pivotal role in the production of high-performance electronic devices, particularly SiC epi/epitaxial wafers. This article delves into the significance of SiC epitaxial growth, the factors influencing the quality of SiC epitaxial layers, and the distinctions between homoge

Sapphire (Al2O3) belongs to the hexagonal crystal system, with its crystal orientations typically defined by crystal planes (hkl) and crystal axes (a, b, c). The crystal axes consist of three directions: a, b, and c. Among these, the a and b axes form a 60-degree angle on the plane, while the c axis stands perpendicula

Silicon carbide (SiC) serves as a crucial semiconductor material with wide applications in power electronics, optoelectronics, and various other fields. However, during the growth process of SiC, various defects often arise, significantly impacting the material's performance and device reliability. Hence, understan

The wafer manufacturing process includes two key steps: SiC substrate and epitaxy. The SiC substrate serves as the foundational material for semiconductor devices, such as silicon (Si) wafers, determining their structure and basic characteristics while providing a smooth base surface. So, what is epitaxy? Simply put, e

Semiconductor materials have continuously evolved, with each generation bringing advancements in performance and capabilities. The emergence of fourth generation wide bandgap semiconductors marks another significant milestone in this progression. In this condensed blog post, we will delve into the definition, key mater

In solid-state physics, the term "bandgap" refers to the energy difference between the valence band and the conduction band in solid materials. The valence band is the energy level region filled with electrons, while the conduction band is the region where electrons can move freely. The presence of a bandgap determines