The processing of 4H-SiC substrates involves the following key steps: 1. Crystal Orientation: X-ray diffraction (XRD) is used to orient the ingot. When an X-ray beam is directed at the crystal plane to be oriented, the crystal orientation is determined by the angle of the diffracted beams.

The growth of 8-inch conductive 4H-SiC (Silicon Carbide wafer) wafers is a sophisticated process involving precise techniques and advanced equipment. Below are the main steps and key technologies involved in growing 8-inch conductive 4H-SiC single crystals:

Introduction Gallium nitride possesses excellent physical and chemical properties, such as a wide bandgap, high breakdown electric field, and high thermal conductivity, making it highly promising for electronic and optoelectronic devices. However, high dislocation densities commonly found in GaN single crystals can significantly affect device performance, reducing the material's photoelectric conversion efficiency and electron mobility. Therefore, exploring methods for growing high-quality GaN single crystals and controlling dislocations is of great importance. The ammonothermal method has become a key technique for producing GaN single crystals due to its unique advantages.

Chamfering is a crucial process in the production and processing of silicon carbide (SiC), gallium nitride (GaN), and sapphire wafers. This technique involves smoothing the edges of the wafers, which is essential for several reasons:

Silicon carbide (SiC) is a critical material in the development of high-performance MOSFET devices due to its superior electrical, thermal, and mechanical properties. However, defects such as triangular defects and carrot defects in SiC substrates and epitaxial layers significantly impact the performance of these devic

Chemical Mechanical Polishing (CMP) is a surface planarization technique that combines chemical etching and mechanical abrasion, widely used in semiconductor manufacturing. The CMP process uses chemical polishing slurry containing etchants that react with the wafer surface material, making it easier to abrade. Simultan

In semiconductor manufacturing, silicon carbide (SiC substrates) substrates need to be precisely positioned during various processing steps to ensure accuracy and consistency. To achieve this, specific alignment marks are designed on the substrates. Flat edges and notches are two common types of alignment marks, each w

Silicon carbide (SiC) substrates play a crucial role in the semiconductor industry, particularly in high-temperature, high-power, and high-frequency applications. Their exceptional electrical and thermal properties make them ideal for high-performance electronic devices. The processing of SiC substrates is complex, wit

Silicon carbide (SiC) is prized for its exceptional properties, finding extensive use across high-tech sectors. Polishing SiC ingots enhances their performance, serving as a crucial step in various applications. Here, we explore why polishing is essential and the direct applications of polished SiC ingots. Reasons for

What is CMP? Chemical Mechanical Planarization (CMP) is a critical process in semiconductor manufacturing used to planarize the surface of semiconductor wafers. CMP combines both chemical and mechanical forces to remove material from the wafer surface, achieving a highly flat and smooth finish. The process involves the