In semiconductor wafer manufacturing, material removal techniques play a critical role. The three commonly used techniques are Grinding, CMP (Chemical Mechanical Polishing), and MP (Mechanical Polishing). Although all involve material removal, their principles, application scenarios, and effects differ. This article will explore the connections and differences between these three techniques.

4H-SiC (Silicon Carbide) is an important wide bandgap semiconductor material widely used in high-temperature, high-frequency, and high-power electronic devices. To enhance the performance of 4H-SiC devices, it is crucial to minimize defects during the epitaxial growth process. Below are some methods for controlling defects in 4H-SiC homoepitaxial growth:

In the semiconductor industry, Semiconductor wafer quality assessment is critical for ensuring the performance and reliability of devices. Understanding and evaluating various parameters is essential for maintaining high standards. Below are some key terms and their significance in wafer quality assessment:

SiC is a binary compound formed by Si and C elements in a 1:1 ratio, i.e., 50% Si and 50% C, with its basic structural unit being a Si-C tetrahedron.For example, Si atom diameter is larger, equivalent to an apple, while C atom diameter is smaller, equivalent to an orange. When an equal number of oranges and apples are stacked together, a SiC crystal is formed.

Silicon epitaxial layers and substrates are two important components in the semiconductor manufacturing process. The substrate is the basis for semiconductor chip manufacturing and is mainly made of single crystal silicon material. The silicon epitaxial layer is a layer of silicon material processed and grown on the substrate, and its material properties are the same as the substrate. Both are different in composition, structure and properties.

Substrate materials play a crucial role in the fabrication of semiconductors and electronic devices. These substrates can be broadly classified into three types based on their internal structure: single crystal, polycrystalline, and amorphous. Each type has distinct physical characteristics, manufacturing processes, and application areas. This article will provide a detailed analysis of these substrate materials, highlighting their unique properties, advantages, and disadvantages, and exploring their practical applications.

Epitaxial wafers are essential materials in the semiconductor industry, crucial for manufacturing high-performance devices such as computer chips, sensors, and power electronics. The production of high-quality epitaxial wafers involves a series of complex, high-precision processes that require overcoming various technical and operational challenges. This article explores the main challenges in the production of epitaxial wafers and introduces how JXT provides high-quality epitaxial wafers to meet the needs of research and high-end applications.

Silicon Carbide (SiC) substrates are classified based on their quality and characteristics, which determine their suitability for various applications and market value. The following are the primary grades of SiC substrates:

Epitaxial growth of a silicon atomic layer on a silicon wafer substrate, creating what is commonly known as an epitaxial wafer, offers substantial advantages. In CMOS silicon technology, epitaxial growth (EPI) is a critical process step. Here’s an in-depth look at its key roles and benefits:

Abstract Silicon carbide (SiC) substrates are critical for high-power and high-frequency electronic devices, as well as optoelectronic applications. However, the presence of defects, often referred to as "birthmarks," can significantly impact their performance and reliability. This paper explores the causes of these defects and their effects on the mechanical, electrical, thermal, and optical properties of SiC substrates. The necessity of stringent control over the production processes to minimize these defects is also discussed.