Recently, a renowned international client conducted a thorough evaluation of JXT's 4H Silicon Carbide (SiC) wafers and provided detailed technical feedback. The client assessed key aspects such as transmission, reflection, and overall crystalline quality, verifying the superiority of JXT's 4H-HPSI SiC material through experimental data. Below, we will present a technical overview of JXT's SiC products, incorporating the provided test graphs to highlight their unique properties and competitive advantages.

Silicon carbide (SiC) is a crucial wide-bandgap semiconductor material widely used in high-power electronics and optical devices. Depending on the application requirements, SiC wafers are typically categorized into conductive and semi-insulating types. Conductive SiC wafers are doped with conductive impurities, such as nitrogen or phosphorus, to enhance their electrical conductivity. In contrast, semi-insulating SiC wafers undergo specific processing to achieve high resistivity, making them suitable for use in optical, RF, and microwave devices. This article compares and analyzes the transmittance characteristics of conductive and semi-insulating SiC wafers under visible light, providing insights into their optical performance for various applications.

Gallium nitride (GaN), as a crucial wide-bandgap semiconductor material, is renowned for its exceptional electrical, thermal, and optical properties. It has found widespread use in high-power, high-frequency electronic devices, as well as optoelectronic devices. GaN epitaxy technology, a key step in device manufacturing, directly impacts the crystalline quality and performance of the material. This article explores the primary epitaxy methods, common substrates, and their applications in electronic and optoelectronic devices.

Silicon carbide (SiC) is an advanced functional material that, due to its outstanding physical and chemical properties, is widely used in various industrial fields. Silicon carbide ceramics and silicon carbide wafers are two typical forms of SiC products. While both are based on silicon carbide, they differ significantly in terms of manufacturing processes, application fields, and performance characteristics. This article explores the distinctions and connections between these two materials and highlights their crucial roles in different industries.

Wafer dicing is a critical step in semiconductor manufacturing, involving the process of cutting a semiconductor wafer into individual chips (dies) after circuit fabrication is completed. This step typically follows wafer processing and testing, serving as a key operation before integrated circuit (IC) packaging. As chip designs become increasingly complex and smaller in size, the precision, efficiency, and impact of wafer dicing on wafer integrity have become essential considerations.

In the production of silicon carbide (SiC) wafers, monitoring and testing of process parameters are crucial to ensuring the quality and performance of the wafers. Below are some relevant terms and their explanations: 1. Terms Related to Wafer Manufacturing Epitaxial Layer: A high-quality single-crystal layer formed on

In today's rapidly advancing technological landscape, Augmented Reality (AR) has emerged as a transformative force, reshaping how we interact with our surroundings and redefining productivity tools. AR glasses, a cornerstone of this technology, enable users to overlay virtual elements onto the real world, allowing for seamless interaction between the physical and digital realms.

Silicon carbide (SiC) wafers are widely used in high-power, high-frequency, and high-temperature applications due to their excellent electrical and thermal properties. In production, SiC wafers often undergo thinning to improve performance, such as heat dissipation and electrical characteristics. Different thicknesses of SiC wafers are used for specific applications, impacting their functionality and reliability.

As the demand for power electronic devices continues to grow, traditional silicon-based semiconductor materials are increasingly unable to meet the stringent requirements of modern high-temperature, high-voltage, and high-frequency applications. Silicon carbide (SiC), as an emerging wide bandgap semiconductor material, has become a key material for power semiconductor devices due to its excellent electrical and thermal properties. The silicon carbide homoepitaxial wafer, as the foundational technology in SiC device manufacturing, plays a critical role in improving device performance and reliability.

Gallium arsenide (GaAs) is a compound semiconductor material known for its exceptional electronic and optical properties. As a III-V semiconductor, GaAs offers superior electron mobility, excellent high-frequency performance, and resilience in high-temperature environments. These advantages make GaAs substrates essential for the fabrication of advanced semiconductor devices, including microwave, millimeter-wave, optoelectronic components, and high-frequency power amplifiers. With the ongoing advancement of semiconductor technology, the industry has shifted towards larger wafer sizes, and 8-inch (approximately 200 mm) GaAs substrates are increasingly becoming the standard. This shift is driving the mass production and performance enhancement of GaAs-based devices.