With the rapid advancement of wide bandgap semiconductor materials, gallium oxide (Ga₂O₃) has demonstrated significant potential in power electronic devices, ultraviolet detectors, and optoelectronic applications due to its ultra-wide bandgap (4.8–5.3 eV), high breakdown electric field (~8 MV/cm), and excellent optoelectronic properties. However, given its high melting point (~1800°C), the fabrication of high-quality, large-sized Ga₂O₃ single crystals remains a critical research focus.

Gallium Nitride (GaN) single-crystal substrates play a crucial role in the development of advanced optoelectronic and power devices. However, different grades of GaN substrates exist, with D-Grade (D) and P-Grade (P) being two common classifications. These grades differ significantly in terms of crystal quality, defect density, surface characteristics, and application suitability. This article provides a comprehensive comparison of D-Grade and P-Grade GaN substrates to help industry professionals select the appropriate material for their specific needs.

Silicon carbide (SiC), as a third-generation semiconductor material, exhibits excellent physical and chemical properties, making it highly promising for applications in power electronics, RF devices, and high-temperature, high-frequency fields. Currently, the industrial preparation of SiC single crystals primarily relies on the Physical Vapor Transport (PVT) method, which utilizes high-temperature sublimation, vapor transport, and crystal growth to produce high-quality SiC boules. This paper provides a detailed explanation of the fundamental principles, process flow, key technical parameters, and challenges associated with the PVT method, along with possible improvements for future advancements.

4H silicon carbide (4H-SiC) has emerged as a crucial material for next-generation high-power electronic devices, RF/microwave electronics, and quantum information technology due to its exceptional physical properties, including a wide bandgap (~3.26 eV), high carrier mobility (~1000 cm²/V·s), high thermal conductivity (~490 W/m·K), and excellent chemical stability. However, the presence of dislocation densities as high as 10³ ~ 10⁴ cm⁻² significantly impairs its performance and represents a major bottleneck to fully realizing its potential. This paper discusses the characteristics, formation mechanisms, transformation behaviors, and impacts of dislocations in 4H-SiC single crystals. It also analyzes their evolution during processing and epitaxy and explores future research directions and application prospects.

Silicon carbide (SiC), as a wide-bandgap semiconductor material, holds significant promise in high-power, high-frequency, and high-temperature applications. However, the frequent occurrence of defects during SiC crystal growth and epitaxy poses challenges in reducing defect density and improving yield. This article systematically discusses solutions from the perspectives of crystal growth, epitaxial optimization, defect control, and quality management.

Gallium oxide (Ga₂O₃), as an emerging wide-bandgap semiconductor material, has attracted significant attention due to its exceptional physical properties and broad application potential. Different crystal orientations of gallium oxide wafers exhibit notable variations in electron mobility, optical properties, surface flatness, and other characteristics, directly determining their advantages in specific fields. This article introduces the primary crystal orientations of gallium oxide wafers and their applications.

Sapphire substrates are widely used in optoelectronics and semiconductor industries due to their exceptional mechanical strength, thermal stability, and optical properties. In recent years, with the rapid development of LED, micro-LED, and compound semiconductor technologies, Nano-patterned Sapphire Substrates (NPSS) have gained significant attention for their ability to enhance the crystal quality of epitaxial materials and improve light extraction efficiency.

Silicon carbide (SiC), as a wide-bandgap semiconductor material, is highly valued for its exceptional performance in high-power, high-frequency, and high-temperature electronic devices. During SiC epitaxial growth, the silicon face (Si-face) is typically chosen over the carbon face (C-face) as the growth surface. This preference is not incidental but is based on the significant differences in the physicochemical properties of the two surfaces, with Si-face epitaxy better meeting the industrial requirements for high-quality epitaxial layers. This article systematically discusses the reasons behind this choice from the perspectives of surface energy and chemical activity, epitaxial growth rate, surface morphology and crystal defects, interface properties, and industrial practice.

Wafer warpage refers to the bending or non-flatness of a wafer surface during manufacturing or processing. It is typically measured as the maximum deviation of the wafer surface from an ideal flat plane and is categorized as positive warpage (upward curvature) or negative warpage (downward curvature). Excessive warpage can negatively impact subsequent processes such as lithography, etching, and thin-film deposition, as well as the performance of the final devices.

With the rapid advancement of electronic technology, the demand for high-performance semiconductor devices has significantly increased. Diamond, as a promising emerging semiconductor material, offers exceptional physical properties, making it highly suitable for high-power, high-frequency, and high-temperature electronic devices. This article provides a systematic analysis of diamond's material advantages, potential applications, and challenges, to assess its feasibility in replacing existing materials in high-power semiconductor devices.