With the rapid development of wide-bandgap semiconductor materials, silicon carbide (SiC) has become a core material for power electronics and radio frequency (RF) devices due to its excellent thermal stability, high breakdown field strength, and high electron mobility. However, SiC wafers are prone to warping during manufacturing and processing, which not only affects the uniformity of epitaxial growth but also poses challenges to device fabrication and packaging. Therefore, a thorough understanding of the causes, measurement methods, and control strategies for SiC substrate warp is crucial for improving device performance and production yield.

With the continuous advancement of display technology, Micro-LED has gained significant market attention as the next-generation display solution due to its high brightness, high contrast, low power consumption, and long lifespan. Among various substrate materials, GaN-on-Silicon epitaxial wafers stand out as a key choice for industrialization due to their large-scale production capability, cost-effectiveness, and compatibility with CMOS technology. This article provides a detailed overview of the structure, advantages, key parameters, and application prospects of GaN-on-Silicon epitaxial wafers.

As a third-generation semiconductor material, silicon carbide (SiC) boasts high breakdown electric field strength, a wide bandgap, and high thermal conductivity, making it widely applicable in power electronics, RF devices, and high-temperature sensing. In SiC device manufacturing, the thickness of the epitaxial layer is a crucial parameter affecting performance. Does a thicker SiC epitaxial layer always yield better results? How should the epitaxial layer thickness be optimized for different applications? This article provides a technical analysis of the impact of SiC epitaxial layer thickness and introduces JXT's customized epitaxial wafer solutions.

In the semiconductor industry, resistivity is a crucial physical property that is often overlooked. Whether it's the wiring that supports household appliances or the microcircuits integrated into modern smart devices, resistivity plays an indispensable role. This article will delve into the basic concepts of resistivity, measurement methods, and its impact on substrate materials, particularly in semiconductor applications.

In modern optoelectronic and microelectronic technologies, Lithium Tantalate (LiTaO₃, LT) and Lithium Niobate (LiNbO₃, LN) are two essential nonlinear optical and piezoelectric materials widely used in lasers, optical communication, acoustic devices, and more. Although they belong to the same lithium-based tantalum-niobium oxide family, they exhibit distinct differences in performance and applications. This article provides an in-depth comparison of LT and LN, highlighting their unique properties and advantages in various fields.

With the continuous evolution of semiconductor technology, each technological breakthrough, from first-generation silicon (Si) materials to third-generation wide bandgap semiconductors (SiC, GaN), has driven the application of electronic devices in extreme environments such as high frequency, high power, and high temperature. However, third-generation semiconductor materials still have limitations in breakdown field strength, thermal conductivity, and adaptability to extreme conditions, prompting researchers to explore the more promising fourth-generation semiconductor materials. These primarily include ultra-wide bandgap (UWBG) materials such as gallium oxide (Ga₂O₃), diamond, and aluminum nitride (AlN). With wider bandgaps, higher breakdown field strengths, and superior thermal stability, these materials are considered key enablers for next-generation high-power electronics, RF devices, and deep-ultraviolet optoelectronics.

In the field of quantum-enhanced semiconductor technology, we are thrilled to see the groundbreaking research published by the team at Friedrich-Alexander-Universität Erlangen-Nürnberg. This study highlights a revolutionary approach using quantum technology to achieve high-precision mapping of electric fields and charge carrier distributions within semiconductor devices. Notably, the research explicitly acknowledges that the high-quality 4H-SiC wafers used in the experiments were supplied by JXT Technology Co., Ltd., further emphasizing our products' critical role in advancing cutting-edge scientific research.

With the rapid advancement of high-tech industries, sapphire wafers, particularly in the 8-inch size, have become a critical material in the semiconductor and optoelectronic fields. Known for their exceptional mechanical strength, thermal stability, and optical properties, sapphire wafers are widely used in LED chip manufacturing, optical windows, and other high-tech devices. However, the production of 8-inch sapphire wafers presents significant challenges, including yield rates, cost control, and technical difficulties.

The primary purpose of silicon carbide (SiC) wafer polishing is to enhance surface flatness, which is critical as the fundamental carrier in chip manufacturing. The surface quality of the wafer plays a decisive role in the success of subsequent processes. This article explores the significance of SiC wafer polishing and its key role in semiconductor manufacturing.

Gallium nitride (GaN), as a third-generation semiconductor material, possesses exceptional properties such as a wide bandgap (3.4 eV), high electron mobility, a high breakdown electric field (~3.3 MV/cm), and excellent thermal stability. These characteristics make it highly suitable for applications in RF communications, power electronics, and optoelectronics. As the semiconductor industry shifts toward larger wafer sizes, 8-inch GaN single-crystal substrates are gaining significant attention due to their superior performance and cost advantages. This article explores the benefits of 8-inch GaN single-crystal substrates from the perspectives of material properties, manufacturing efficiency, application potential, and industrial impact.