In the field of semiconductors, gallium nitride (GaN) has become a key material for high-frequency, high-power, and optoelectronic device applications due to its excellent electrical and optical properties. The epitaxial substrate, as the foundation for supporting the growth of gallium nitride, plays a decisive role in the performance of the final device. Besides the commonly used sapphire and silicon, materials such as silicon carbide (SiC), aluminum nitride (AlN), and zinc oxide (ZnO) also show great potential as epitaxial substrates for gallium nitride, each with unique advantages and suitable application scenarios.

Infrared optical materials and coating technologies are essential components in optical systems for defense, aerospace, communications, and medical applications. This article explores the characteristics, applications, and coating technologies of five key infrared optical materials: sapphire, gallium arsenide, silica, germanium, and silicon.

As semiconductor technology continues to evolve, the demand for high-performance substrate materials is rapidly increasing. Aluminum nitride (AlN), a wide bandgap semiconductor material, stands out for its exceptional physical and chemical properties. It has become a critical enabler for high-power, high-frequency, and optoelectronic devices. This article analyzes the key characteristics of AlN substrates and their advantages in semiconductor applications.

Dummy Wafer is a specialized wafer used in semiconductor manufacturing to meet specific equipment requirements. It is typically not involved in actual product fabrication and is not sold as a finished product. Its primary purpose is to ensure equipment stability, optimize resource utilization, and reduce production risks. The design and use of Dummy Wafers play a crucial role in production management in semiconductor fabs. This article systematically analyzes Dummy Wafers in terms of their definition, roles, material selection, and management.

Gallium nitride (GaN) is a key wide-bandgap semiconductor material widely used in optoelectronics and high-power electronic devices. To meet the stringent requirements of these high-performance applications, the fabrication of high-quality GaN single-crystal substrates is essential. This article outlines the detailed fabrication process, including crystal acquisition, slicing, polishing, and surface treatment, with a focus on precision and quality control.

GaN-on-Si LED epitaxial wafers are essential material platforms for high-performance optoelectronic devices. Blue and green light, as the two core wavelength bands of GaN-based LEDs, are widely used in lighting, displays, and other optoelectronic fields. However, due to material properties and epitaxial technology limitations, there are significant differences in the performance and fabrication processes of blue and green light epitaxial wafers. This article provides an in-depth analysis of the technical features, fabrication challenges, and future prospects of GaN-on-Si blue and green light epitaxial wafers.

In industries such as precision manufacturing, optics, semiconductors, and aerospace, surface roughness is a crucial metric for evaluating the quality of a component’s surface. Surface roughness affects not only the appearance of a product but also its friction, optical reflectivity, contact performance, and corrosion resistance. Therefore, understanding the definition, influencing factors, and measurement methods of surface roughness is essential for enhancing manufacturing quality and efficiency.

Diamond films are thin film materials with excellent physicochemical properties, demonstrating significant advantages in hardness, thermal conductivity, and transparency. As a result, they find extensive applications in high-tech fields such as electronics, optics, and mechanics. This article explores the definition, chemical composition, molecular structure, and fabrication processes of diamond films, providing a better understanding of their characteristics and application prospects.

Silicon carbide (SiC), as a third-generation semiconductor material, plays a crucial role in modern high-tech applications due to its wide bandgap, high thermal conductivity, excellent chemical stability, and radiation resistance. Particularly, 2-inch, 3-millimeter thick silicon carbide substrates find extensive use in various advanced technology sectors, with their unique physical and chemical properties making them ideal for manufacturing numerous advanced devices. This article explores the key applications of these substrates and introduces the custom processing services offered by JXT.

As modern electronic devices evolve towards miniaturization, thinness, and high performance, integrated circuit (IC) manufacturing processes are continuously optimized to meet increasingly stringent technical demands. Wafer thinning, a critical step in the back-end processing of IC manufacturing, plays a significant role in enhancing packaging performance, heat dissipation, and overall production efficiency. This article will explore the importance of wafer thinning in contemporary semiconductor manufacturing, discussing its benefits from the perspectives of packaging requirements, thermal performance, and cost control, while incorporating the specific thickness characteristics of silicon carbide (SiC) wafers.