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10*10mm SiC (3C-N Type)

Specific Information

3C-N type silicon carbide (3C-N SiC) is an N-type doped silicon carbide material with a cubic (3C) crystal structure, characterized by a relatively narrow bandgap (~2.36 eV), high electron mobility, and excellent thermal stability. The N-type doping is typically achieved by introducing nitrogen (N) or phosphorus (P), imparting electronic conductivity. Compared to 4H-SiC and 6H-SiC, 3C-SiC is more readily epitaxially grown on silicon substrates, making it suitable for cost-effective high-frequency electronic devices and radio-frequency applications.

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specification
Properties

Item	3C-N type SiC substrate（10*10mm, 2~6inch）
Diameter	10*10±0.3mm	50.8±0.3mm	100.0±0.3mm	150.0±0.5mm
Thickness	350±25μm	350±25μm	350±25μm	350±25μm
Surface Orientation	On-Axis: <111>±0.5°
Primary Flat Orientation	None	Parallel to <1-10>±5°
Primary Flat Length	None	16.0±1.5mm	32.5±2.0mm	32.5±2.0mm
Secondary Flat Orientation	None	Silicon face up: 90° CW. from Primary flat±5.0°
Secondary Flat Length	None	8.0±1.5mm	18.0±2.0mm	18.0±2.0mm
Resistivity	≤0.8Ω•cm	≤0.8Ω•cm	≤1Ω•cm	≤1Ω•cm
Front Surface Finish	Si-Face: CMP, Ra<0.5nm
Back Surface Finish	C-Face: Optical Polish, Ra<1.0nm
Laser Mark	Back side: C-Face
TTV	≤5μm	≤10μm	≤15μm	≤15μm
BOW	≤10μm	≤25μm	≤30μm	≤40μm
WARP	≤20μm	≤30μm	≤40μm	≤60μm
Edge Exclusion	≤6 mm

Customization specifications：

* Various sizes and shapes such as 5*5mm

* Various thicknesses:0.1~20mm

* Various surface roughness such as slicing,lapping,polishing.

* Silicon carbide crystal ingots are available.

Silicon carbide substrates(SiC) are the third-generation semiconductor materials and belong to Wide Band Gap Semiconductors. Silicon carbide(SiC) is a group IV-IV compound semiconductor material formed by C and Si elements in a ratio of 1:1 and has the characteristics of high temperature resistance, high critical breakdown electric field, high electron saturation migration rate and high thermal conductivity. Compared with silicon-based power devices, Silicon carbide devices will greatly improve the energy conversion efficiency because of its high voltage, high temperature and low loss. It will be one of the most basic and widely used materials for making semiconductor chips in the future.

Crystal Structure	Hexagonal
Lattice Constant(nm)	a=4.349Å
Density(g/cm³)	2.36
Stacking Sequence	ABC
Mohs Hardness(mohs)	9.2
Dielectric Constant	9.66
Band Gap(eV)	2.36
Breakdown Electrical Field (MV/cm)	2-5*10⁶
Thermal Conductivity(W/cm.K)	3-5
Thermal Expansion	3.8*10^-6/k
Refractive Index	2.615

10*10mm SiC (3C-N Type)

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